Migration of dislocations in strained GaN heteroepitaxial layers

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Translated title of the contribution	Migration of dislocations in strained GaN heteroepitaxial layers
Original language	English
Pages (from-to)	952 - 955
Journal	physica status solidi (b)
Volume	234
Publication status	Published - 2002

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@article{8a518834c1b2437e8c2be849561c9bcd,

title = "Migration of dislocations in strained GaN heteroepitaxial layers",

author = "S Sahonta and MQ Baines and D Cherns and H Amano and FA Ponce",

year = "2002",

language = "English",

volume = "234",

pages = "952 -- 955",

journal = "physica status solidi (b)",

issn = "1521-3951",

publisher = "John Wiley and Sons Inc",

}