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Drain Transient Spectroscopy is a commonly used technique to characterize trapping in reliability studies in semiconductor devices, and it has been used extensively for GaN HEMTs. Here we show that the standard DLTS interpretation can suggest the presence of both electron and hole traps. However, we demonstrate that the trap attribution can be incorrect, and the hole trap is in fact an artefact. These results show that great care is required in the interpretation of drain current transients in GaN HEMTs, and that trapping cannot always be usefully defined in terms of trap densities and capture cross-sections without reference to carrier transport mechanisms associated with these traps.
|Publication status||Published - 29 Apr 2019|
|Event||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States|
Duration: 29 Apr 2019 → 2 May 2019
|Conference||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019|
|Period||29/04/19 → 2/05/19|
Bibliographical noteFunding Information:
This work was part funded by the UK EPSRC under grant EP/N031563/1. Funding for the PhD studentship of Manikant was provided by MACOM. The IQE contribution and device fabrication at Bemitec was funded by the European Space Agency.
© 2019 CS Mantech. All rights reserved.
Copyright 2019 Elsevier B.V., All rights reserved.
- Charge Trapping
- GaN HEMT
- Transient spectroscopy