Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model

Manikant Singh; M. J. Uren; S. Karboyan; H. Chandrasekar; Trevor Martin; M. Kuball

Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model

Manikant Singh^*, M. J. Uren, S. Karboyan, H. Chandrasekar, Trevor Martin, M. Kuball

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

Drain Transient Spectroscopy is a commonly used technique to characterize trapping in reliability studies in semiconductor devices, and it has been used extensively for GaN HEMTs. Here we show that the standard DLTS interpretation can suggest the presence of both electron and hole traps. However, we demonstrate that the trap attribution can be incorrect, and the hole trap is in fact an artefact. These results show that great care is required in the interpretation of drain current transients in GaN HEMTs, and that trapping cannot always be usefully defined in terms of trap densities and capture cross-sections without reference to carrier transport mechanisms associated with these traps.

Original language	English
Publication status	Published - 29 Apr 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 29 Apr 2019 → 2 May 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	29/04/19 → 2/05/19

Bibliographical note

Funding Information:
This work was part funded by the UK EPSRC under grant EP/N031563/1. Funding for the PhD studentship of Manikant was provided by MACOM. The IQE contribution and device fabrication at Bemitec was funded by the European Space Agency.

Publisher Copyright:
© 2019 CS Mantech. All rights reserved.

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

Charge Trapping
GaN HEMT
Reliability
Transient spectroscopy

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Cite this

@conference{dc9fe87e456d42bda76b2c29d0317a09,

title = "Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model",

abstract = "Drain Transient Spectroscopy is a commonly used technique to characterize trapping in reliability studies in semiconductor devices, and it has been used extensively for GaN HEMTs. Here we show that the standard DLTS interpretation can suggest the presence of both electron and hole traps. However, we demonstrate that the trap attribution can be incorrect, and the hole trap is in fact an artefact. These results show that great care is required in the interpretation of drain current transients in GaN HEMTs, and that trapping cannot always be usefully defined in terms of trap densities and capture cross-sections without reference to carrier transport mechanisms associated with these traps.",

keywords = "Charge Trapping, GaN HEMT, Reliability, Transient spectroscopy",

author = "Manikant Singh and Uren, {M. J.} and S. Karboyan and H. Chandrasekar and Trevor Martin and M. Kuball",

note = "Funding Information: This work was part funded by the UK EPSRC under grant EP/N031563/1. Funding for the PhD studentship of Manikant was provided by MACOM. The IQE contribution and device fabrication at Bemitec was funded by the European Space Agency. Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

month = apr,

day = "29",

language = "English",

}

Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model. / Singh, Manikant; Uren, M. J.; Karboyan, S. et al.
2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Misinterpretation of drain transient spectroscopy in GaN HEMTs

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

AU - Singh, Manikant

AU - Uren, M. J.

AU - Karboyan, S.

AU - Chandrasekar, H.

AU - Martin, Trevor

AU - Kuball, M.

N1 - Funding Information: This work was part funded by the UK EPSRC under grant EP/N031563/1. Funding for the PhD studentship of Manikant was provided by MACOM. The IQE contribution and device fabrication at Bemitec was funded by the European Space Agency. Publisher Copyright: © 2019 CS Mantech. All rights reserved. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2019/4/29

Y1 - 2019/4/29

N2 - Drain Transient Spectroscopy is a commonly used technique to characterize trapping in reliability studies in semiconductor devices, and it has been used extensively for GaN HEMTs. Here we show that the standard DLTS interpretation can suggest the presence of both electron and hole traps. However, we demonstrate that the trap attribution can be incorrect, and the hole trap is in fact an artefact. These results show that great care is required in the interpretation of drain current transients in GaN HEMTs, and that trapping cannot always be usefully defined in terms of trap densities and capture cross-sections without reference to carrier transport mechanisms associated with these traps.

AB - Drain Transient Spectroscopy is a commonly used technique to characterize trapping in reliability studies in semiconductor devices, and it has been used extensively for GaN HEMTs. Here we show that the standard DLTS interpretation can suggest the presence of both electron and hole traps. However, we demonstrate that the trap attribution can be incorrect, and the hole trap is in fact an artefact. These results show that great care is required in the interpretation of drain current transients in GaN HEMTs, and that trapping cannot always be usefully defined in terms of trap densities and capture cross-sections without reference to carrier transport mechanisms associated with these traps.

KW - Charge Trapping

KW - GaN HEMT

KW - Reliability

KW - Transient spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85067019999&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:85067019999

Y2 - 29 April 2019 through 2 May 2019

ER -

Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model

Abstract

Conference

Bibliographical note

Keywords

Handle.net

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High Performance Buffers for RF GaN Electronics

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Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model

Abstract

Conference

Bibliographical note

Keywords

Handle.net

Other files and links

Fingerprint

Projects

High Performance Buffers for RF GaN Electronics

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