TY - JOUR
T1 - Model expressions for the spin-orbit interaction and phonon-mediated spin dynamics in quantum dots
AU - Vaughan, Martin
AU - Rorison, Judy
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Model expressions for the spin-orbit interaction (SOI) in a quantum dot are obtained. The resulting form does not neglect cubic terms and allows for a generalized structural inversion asymmetry. We also obtain analytical expressions for the coupling between states for the electron-phonon interaction and use these to derive spin-relaxation rates, which are found to be qualitatively similar to those derived elsewhere in the literature. We find that, due to the inclusion of cubic terms, the Dresselhaus contribution to the ground state spin relaxation disappears for spherical dots. A comparison with previous theory and existing experimental results shows good agreement thereby presenting a clear analytical formalism for future developments. Comparative calculations for potential materials are presented.
AB - Model expressions for the spin-orbit interaction (SOI) in a quantum dot are obtained. The resulting form does not neglect cubic terms and allows for a generalized structural inversion asymmetry. We also obtain analytical expressions for the coupling between states for the electron-phonon interaction and use these to derive spin-relaxation rates, which are found to be qualitatively similar to those derived elsewhere in the literature. We find that, due to the inclusion of cubic terms, the Dresselhaus contribution to the ground state spin relaxation disappears for spherical dots. A comparison with previous theory and existing experimental results shows good agreement thereby presenting a clear analytical formalism for future developments. Comparative calculations for potential materials are presented.
KW - spin orbit interaction
KW - spin relaxation
KW - quantum dots
UR - http://www.scopus.com/inward/record.url?scp=85038623717&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aa995d
DO - 10.1088/1361-6641/aa995d
M3 - Article (Academic Journal)
AN - SCOPUS:85038623717
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
M1 - 014001
ER -