Modeling Dilute Nitride 1.3 mu m Quantum Well Lasers: Incorporation of N Compositional Fluctuations

Xiao Sun*, Nikolaos Vogiatzis, Judy M. Rorison

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

1 Citation (Scopus)

Abstract

Compositional fluctuations of N in Ga0.68In0.32 NxAs1-x result in quantum dot (QD)-like fluctuations in the conduction band edge (CBE). The influence of these compositional fluctuations on the performance of Ga0.68In0.32NxAs1-x/GaAs quantum well (QW) lasers has been studied using a rate equation approach. Adding N into InGaAs has been observed to reduce the photon luminescence (PL) intensity, broaden the line width, and increase the laser threshold. For low N composition (N approximate to 1%), due to the small density of QD-like fluctuations, the electron density within the fluctuations is below the lasing threshold and they act as defect-related nonradiative centers. However, as N increases (N >= 2%), the density of the QD-like fluctuations increases allowing lasing to occur from the QD-like fluctuations. The dynamics of the electrons and photons in both the 2-D QW and the QD-like fluctuations are evaluated. In addition, by adding the gain of the QD-like fluctuations and the QW confined level gain, a broad-band material gain results can be exploited in tuneable lasers.

Original languageEnglish
Article number1900509
Number of pages9
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume19
Issue number5
DOIs
Publication statusPublished - 2013

Keywords

  • Broad-band gain
  • GaInNAs
  • quantum dot (QD)-like fluctuations
  • RECOMBINATION MECHANISMS
  • BAND-GAP
  • WAVELENGTH
  • GAAS
  • SEMICONDUCTORS
  • TEMPERATURE
  • DIODES
  • ALLOYS
  • GAIN

Cite this