Modeling Dilute Nitride 1.3 mu m Quantum Well Lasers: Incorporation of N Compositional Fluctuations

Xiao Sun*, Nikolaos Vogiatzis, Judy M. Rorison

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)


Compositional fluctuations of N in Ga0.68In0.32 NxAs1-x result in quantum dot (QD)-like fluctuations in the conduction band edge (CBE). The influence of these compositional fluctuations on the performance of Ga0.68In0.32NxAs1-x/GaAs quantum well (QW) lasers has been studied using a rate equation approach. Adding N into InGaAs has been observed to reduce the photon luminescence (PL) intensity, broaden the line width, and increase the laser threshold. For low N composition (N approximate to 1%), due to the small density of QD-like fluctuations, the electron density within the fluctuations is below the lasing threshold and they act as defect-related nonradiative centers. However, as N increases (N >= 2%), the density of the QD-like fluctuations increases allowing lasing to occur from the QD-like fluctuations. The dynamics of the electrons and photons in both the 2-D QW and the QD-like fluctuations are evaluated. In addition, by adding the gain of the QD-like fluctuations and the QW confined level gain, a broad-band material gain results can be exploited in tuneable lasers.

Original languageEnglish
Article number1900509
Number of pages9
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number5
Publication statusPublished - 2013

Structured keywords

  • Photonics and Quantum


  • Broad-band gain
  • GaInNAs
  • quantum dot (QD)-like fluctuations
  • GAAS
  • GAIN


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