Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

Roozbeh Bonyadi, O. Alatise, S. Jahdi, J. Ortiz Gonzalez, L. Ran, P. A. Mawby

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.

Original languageEnglish
Title of host publication9th International Conference on Power Electronics - ECCE Asia
Subtitle of host publication"Green World with Power Electronics", ICPE 2015-ECCE Asia
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages560-566
Number of pages7
ISBN (Electronic)9788957082546
DOIs
Publication statusPublished - 27 Jul 2015
Event9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of
Duration: 1 Jun 20155 Jun 2015

Conference

Conference9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
CountryKorea, Republic of
CitySeoul
Period1/06/155/06/15

Keywords

  • IGBT Parasitic Turn-On Modeling
  • Shoot-through Current
  • Temperature Dependent
  • Voltage Source Converter

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