Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

Roozbeh Bonyadi; O. Alatise; S. Jahdi; J. Ortiz Gonzalez; L. Ran; P. A. Mawby

doi:10.1109/ICPE.2015.7167839

Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

Roozbeh Bonyadi
, O. Alatise
, S. Jahdi
, J. Ortiz Gonzalez
, L. Ran
, P. A. Mawby

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

65 Downloads (Pure)

Abstract

Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.

Original language	English
Title of host publication	9th International Conference on Power Electronics - ECCE Asia
Subtitle of host publication	"Green World with Power Electronics", ICPE 2015-ECCE Asia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	560-566
Number of pages	7
ISBN (Electronic)	9788957082546
DOIs	https://doi.org/10.1109/ICPE.2015.7167839
Publication status	Published - 30 Jul 2015
Event	9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of Duration: 1 Jun 2015 → 5 Jun 2015

Conference

Conference	9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
Country/Territory	Korea, Republic of
City	Seoul
Period	1/06/15 → 5/06/15

Keywords

IGBT Parasitic Turn-On Modeling
Shoot-through Current
Temperature Dependent
Voltage Source Converter

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10.1109/ICPE.2015.7167839

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Accepted author manuscript, 794 KBLicence: Unspecified

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Bonyadi, R., Alatise, O., Jahdi, S., Gonzalez, J. O., Ran, L., & Mawby, P. A. (2015). Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. In 9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia (pp. 560-566). Article 7167839 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICPE.2015.7167839

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title = "Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs",

abstract = "Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.",

keywords = "IGBT Parasitic Turn-On Modeling, Shoot-through Current, Temperature Dependent, Voltage Source Converter",

author = "Roozbeh Bonyadi and O. Alatise and S. Jahdi and Gonzalez, \{J. Ortiz\} and L. Ran and Mawby, \{P. A.\}",

year = "2015",

month = jul,

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doi = "10.1109/ICPE.2015.7167839",

language = "English",

pages = "560--566",

booktitle = "9th International Conference on Power Electronics - ECCE Asia",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia ; Conference date: 01-06-2015 Through 05-06-2015",

}

Bonyadi, R, Alatise, O, Jahdi, S, Gonzalez, JO, Ran, L & Mawby, PA 2015, Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. in 9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia., 7167839, Institute of Electrical and Electronics Engineers (IEEE), pp. 560-566, 9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia, Seoul, Korea, Republic of, 1/06/15. https://doi.org/10.1109/ICPE.2015.7167839

Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. / Bonyadi, Roozbeh; Alatise, O.; Jahdi, S. et al.
9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia. Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 560-566 7167839.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

AU - Bonyadi, Roozbeh

AU - Alatise, O.

AU - Jahdi, S.

AU - Gonzalez, J. Ortiz

AU - Ran, L.

AU - Mawby, P. A.

PY - 2015/7/30

Y1 - 2015/7/30

N2 - Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.

AB - Parasitic turn-on can cause unintentional triggering of the IGBTs since the discharge current of the Miller capacitance coupled with high dV/dt can activate a device that should be off. The short circuit current resulting from parasitic turn-on coupled with the high voltage causes significant power dissipation which can be a reliability issue. This issue is exacerbated by higher ambient temperatures since the negative temperature coefficient of the IGBT's threshold voltage as well as the positive temperature coefficient of the minority carrier lifetime will increase the peak and duration of the short circuit current. Accurate modeling of the shoot-through power and its temperature dependency is important for circuit designers when designing mitigation techniques like multiple resistive paths and bipolar gate drivers. The physics-based model proposed in this paper can produce accurate results with good matching over temperature. The model improves on compact circuit models based on lumped parameters.

KW - IGBT Parasitic Turn-On Modeling

KW - Shoot-through Current

KW - Temperature Dependent

KW - Voltage Source Converter

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DO - 10.1109/ICPE.2015.7167839

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84961908064

SP - 560

EP - 566

BT - 9th International Conference on Power Electronics - ECCE Asia

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia

Y2 - 1 June 2015 through 5 June 2015

ER -

Bonyadi R, Alatise O, Jahdi S, Gonzalez JO, Ran L, Mawby PA. Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs. In 9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia. Institute of Electrical and Electronics Engineers (IEEE). 2015. p. 560-566. 7167839 doi: 10.1109/ICPE.2015.7167839

Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs

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