Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes

Saeed Jahdi; Olayiwola Alatise; Phil Mawby

doi:10.1109/EPE.2014.6911007

Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes

Saeed Jahdi^*
, Olayiwola Alatise
, Phil Mawby

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

3 Citations (Scopus)

73 Downloads (Pure)

Abstract

Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-OFF transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-OFF transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75 °C to 175 °C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10

Original language	English
Title of host publication	2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)	9781479930159
DOIs	https://doi.org/10.1109/EPE.2014.6911007
Publication status	Published - 29 Sept 2014
Event	2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 - Lappeenranta, Finland Duration: 26 Aug 2014 → 28 Aug 2014

Conference

Conference	2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
Country/Territory	Finland
City	Lappeenranta
Period	26/08/14 → 28/08/14

Keywords

Modeling
PiN Diode
Reverse Recovery
Switching Energy

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title = "Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes",

abstract = "Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-OFF transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-OFF transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75 °C to 175 °C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10",

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Jahdi, S, Alatise, O & Mawby, P 2014, Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. in 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014., 6911007, Institute of Electrical and Electronics Engineers (IEEE), 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014, Lappeenranta, Finland, 26/08/14. https://doi.org/10.1109/EPE.2014.6911007

Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes. / Jahdi, Saeed; Alatise, Olayiwola; Mawby, Phil.
2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014. Institute of Electrical and Electronics Engineers (IEEE), 2014. 6911007.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes

AU - Jahdi, Saeed

AU - Alatise, Olayiwola

AU - Mawby, Phil

PY - 2014/9/29

Y1 - 2014/9/29

N2 - Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-OFF transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-OFF transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75 °C to 175 °C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10

AB - Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-OFF transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-OFF transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75 °C to 175 °C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10

KW - Modeling

KW - PiN Diode

KW - Reverse Recovery

KW - Switching Energy

UR - https://www.scopus.com/pages/publications/84923902075

U2 - 10.1109/EPE.2014.6911007

DO - 10.1109/EPE.2014.6911007

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84923902075

BT - 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014

Y2 - 26 August 2014 through 28 August 2014

ER -

Modeling of turn-OFF transient energy in IGBT controlled silicon PiN diodes

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