Modelling and direct measurement of the density of states in GaAsN

M. P. Vaughan*, S. Fahy, E. P. O'Reilly, L. Ivanova, H. Eisele, M. Dähne

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

4 Citations (Scopus)

Abstract

The density of states for a GaAsN sample with a nitrogen concentration of x=1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN.

Original languageEnglish
Pages (from-to)1167-1171
Number of pages5
Journalphysica status solidi (b)
Volume248
Issue number5
DOIs
Publication statusPublished - May 2011

Keywords

  • Density of states
  • Dilute nitrides
  • Linear combination of isolated nitrogen states
  • Scanning tunnelling spectroscopy

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