Modelling and direct measurement of the density of states in GaAsN

M. P. Vaughan; S. Fahy; E. P. O'Reilly; L. Ivanova; H. Eisele; M. Dähne

doi:10.1002/pssb.201000700

Modelling and direct measurement of the density of states in GaAsN

M. P. Vaughan^*, S. Fahy, E. P. O'Reilly, L. Ivanova, H. Eisele, M. Dähne

^*Corresponding author for this work

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

Abstract

The density of states for a GaAsN sample with a nitrogen concentration of x=1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN.

Original language	English
Pages (from-to)	1167-1171
Number of pages	5
Journal	physica status solidi (b)
Volume	248
Issue number	5
DOIs	https://doi.org/10.1002/pssb.201000700
Publication status	Published - May 2011

Keywords

Density of states
Dilute nitrides
Linear combination of isolated nitrogen states
Scanning tunnelling spectroscopy

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title = "Modelling and direct measurement of the density of states in GaAsN",

abstract = "The density of states for a GaAsN sample with a nitrogen concentration of x=1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN.",

keywords = "Density of states, Dilute nitrides, Linear combination of isolated nitrogen states, Scanning tunnelling spectroscopy",

author = "Vaughan, {M. P.} and S. Fahy and O'Reilly, {E. P.} and L. Ivanova and H. Eisele and M. D{\"a}hne",

year = "2011",

month = may,

doi = "10.1002/pssb.201000700",

language = "English",

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pages = "1167--1171",

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T1 - Modelling and direct measurement of the density of states in GaAsN

AU - Vaughan, M. P.

AU - Fahy, S.

AU - O'Reilly, E. P.

AU - Ivanova, L.

AU - Eisele, H.

AU - Dähne, M.

PY - 2011/5

Y1 - 2011/5

N2 - The density of states for a GaAsN sample with a nitrogen concentration of x=1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN.

AB - The density of states for a GaAsN sample with a nitrogen concentration of x=1.2% is determined experimentally via scanning tunnelling spectroscopy. These data are modelled using the linear combination of isolated nitrogen states (LCINS) model within a Greens function framework. Extrinsic thermal and modulation broadening effects due to the measurement process are also incorporated. Excellent agreement to the experimental data is obtained without arbitrary fitting parameters, providing confirmation of the influence of isolated N and N-N pair states on the conduction band dispersion of GaAsN.

KW - Density of states

KW - Dilute nitrides

KW - Linear combination of isolated nitrogen states

KW - Scanning tunnelling spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=79955410490&partnerID=8YFLogxK

U2 - 10.1002/pssb.201000700

DO - 10.1002/pssb.201000700

M3 - Article (Academic Journal)

AN - SCOPUS:79955410490

SN - 0370-1972

VL - 248

SP - 1167

EP - 1171

JO - physica status solidi (b)

JF - physica status solidi (b)

IS - 5

ER -

Modelling and direct measurement of the density of states in GaAsN

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Keywords

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