Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer

Zequan Chen*, Abhishek Mishra, Aditya Bhat Kundapura, Matthew D Smith, Michael J Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

Frequency dispersion of impedance in lateral β-Ga2O3 MOSFETs has been characterized and a model has been established to explain the behavior. The dispersion occurs due to resistive and capacitive coupling between terminal contact pads and the buried conducting layer associated with the accumulation of Si contaminant at the unintentionally-doped epitaxy/substrate interface, which is also responsible for a buried parallel leakage path. Particularly, it is demonstrated that the dispersion is not associated with gate dielectric traps as would often be assumed. A generalized equivalent circuit model, which is capable of reproducing the experimental results, is proposed to explain the observations.
Original languageEnglish
Article number044002
Number of pages4
JournalApplied Physics Express
Volume16
Issue number4
DOIs
Publication statusPublished - 24 Apr 2023

Bibliographical note

Publisher Copyright:
© 2023 The Japan Society of Applied Physics.

Structured keywords

  • CDTR

Keywords

  • gallium oxide
  • MOSFET
  • semiconductor

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