We analyze micro-pillar micro-cavities of III-V semiconductor materials and propose a new type of micro-pillar micro-cavity based on an annular geometry using 3-D finite-difference time-domain (FDTD) method. A dipole source in the cavity region models a single quantum-dot source. We find strong modifications to the dipole emission due to the small modal volume and high Q-factor. We then discuss application to the development of efficient single-photon sources for use in quantum information processing.
|Translated title of the contribution||Modelling quantum dots in conventional and annular III-V micro-pillar micro-cavities for single-photon sources|
|Title of host publication||Nanotechnology, 2004. 4th IEEE Conference on|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Pages||204 - 206|
|Number of pages||3|
|Publication status||Published - 16 Aug 2004|