Abstract
We analyze micro-pillar micro-cavities of III-V semiconductor materials and propose a new type of micro-pillar micro-cavity based on an annular geometry using 3-D finite-difference time-domain (FDTD) method. A dipole source in the cavity region models a single quantum-dot source. We find strong modifications to the dipole emission due to the small modal volume and high Q-factor. We then discuss application to the development of efficient single-photon sources for use in quantum information processing.
Translated title of the contribution | Modelling quantum dots in conventional and annular III-V micro-pillar micro-cavities for single-photon sources |
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Original language | English |
Title of host publication | Nanotechnology, 2004. 4th IEEE Conference on |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 204 - 206 |
Number of pages | 3 |
ISBN (Print) | 0780385365 |
DOIs | |
Publication status | Published - 16 Aug 2004 |
Bibliographical note
Name and Venue of Event: Munich, GermanyResearch Groups and Themes
- QETLabs
- Photonics and Quantum