Monolithic quantum-dot distributed feedback laser array on silicon

Yi Wang, Siming Chen*, Ying Yu, Lidan Zhou, Lin Liu, Chunchuan Yang, Mengya Liao, Mingchu Tang, Zizhuo Liu, Jiang Wu, Wei Li, Ian Ross, Alwyn J. Seeds, Huiyun Liu, Siyuan Yu

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

84 Citations (Scopus)
359 Downloads (Pure)


Electrically pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, to the best of our knowledge, an electrically pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback laser array fabricated in InAs/GaAs quantum-dot gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength covering range of 100 nm, the full span of the O-band. These results indicate that, for the first time, to the best of our knowledge, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.

Original languageEnglish
Pages (from-to)528-533
Number of pages6
Issue number5
Early online date30 Apr 2018
Publication statusPublished - 20 May 2018


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