MOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics

PR Palmer, DA Hinchley, BH Stark

Research output: Contribution to journalArticle (Academic Journal)peer-review

Translated title of the contributionMOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics
Original languageEnglish
Pages (from-to)105 - 110
Number of pages6
JournalIEE Proceedings - Circuits, Devices and Systems
Volume145 (2)
Publication statusPublished - Apr 1998

Bibliographical note

Publisher: Institution of Electrical Engineers (IEE)

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