MOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	MOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics
Original language	English
Pages (from-to)	105 - 110
Number of pages	6
Journal	IEE Proceedings: Circuits, Devices and Systems
Volume	145 (2)
Publication status	Published - Apr 1998

Publisher: Institution of Electrical Engineers (IEE)

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@article{a99ebb38a4ed4606bc96bd6548c8031b,

title = "MOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics",

author = "PR Palmer and DA Hinchley and BH Stark",

note = "Publisher: Institution of Electrical Engineers (IEE)",

year = "1998",

month = apr,

language = "English",

volume = "145 (2)",

pages = "105 -- 110",

journal = "IEE Proceedings: Circuits, Devices and Systems",

issn = "1350-2409",

publisher = "Institution of Engineering and Technology (IET)",

}

TY - JOUR

T1 - MOS and bipolar gated thyristor: a thyristor with IGBT switchingcharacteristics

AU - Palmer, PR

AU - Hinchley, DA

AU - Stark, BH

N1 - Publisher: Institution of Electrical Engineers (IEE)

PY - 1998/4

Y1 - 1998/4

M3 - Article (Academic Journal)

SN - 1350-2409

VL - 145 (2)

SP - 105

EP - 110

JO - IEE Proceedings: Circuits, Devices and Systems

JF - IEE Proceedings: Circuits, Devices and Systems

ER -