Multi-cell soft errors at the 16-nm FinFET technology node

N. Tam; B. L. Bhuva; L. W. Massengill; D. Ball; M. McCurdy; M. L. Alles; I. Chatterjee

doi:10.1109/IRPS.2015.7112730

Multi-cell soft errors at the 16-nm FinFET technology node

N. Tam, B. L. Bhuva, L. W. Massengill, D. Ball, M. McCurdy, M. L. Alles, I. Chatterjee

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

13 Citations (Scopus)

502 Downloads (Pure)

Abstract

Soft error performance of 16-nm FinFET SRAM designs fabricated using a commercial bulk CMOS process is evaluated using heavy-ions. Results included supply voltage variations show that multi-cell upsets dominate soft-error rates. Dual-port SRAM has higher cross-section than single-port SRAM but did not have any multi-cell upset across the bit-line direction. TCAD simulations showing the extent of the perturbation in the electric parameters as a function of particle LET support the experimental data.

Original language	English
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	4B31-4B35
Volume	2015-May
ISBN (Print)	9781467373623
DOIs	https://doi.org/10.1109/IRPS.2015.7112730
Publication status	Published - 26 May 2015
Event	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: 19 Apr 2015 → 23 Apr 2015

Publication series

Name	International Reliability Physics Symposium
Publisher	IEEE
ISSN (Print)	1541-7026

Conference

Conference	IEEE International Reliability Physics Symposium, IRPS 2015
Country/Territory	United States
City	Monterey
Period	19/04/15 → 23/04/15

Keywords

FinFET technology
multi-bit upsets
scaling
soft errors
SRAM
TCAD modeling

Access to Document

10.1109/IRPS.2015.7112730

Tam_MCU_16nm_Finfet
This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at 10.1109/IRPS.2015.7112730.
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Tam, N., Bhuva, B. L., Massengill, L. W., Ball, D., McCurdy, M., Alles, M. L., & Chatterjee, I. (2015). Multi-cell soft errors at the 16-nm FinFET technology node. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2015-May, pp. 4B31-4B35). [7112730] (International Reliability Physics Symposium). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IRPS.2015.7112730

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title = "Multi-cell soft errors at the 16-nm FinFET technology node",

abstract = "Soft error performance of 16-nm FinFET SRAM designs fabricated using a commercial bulk CMOS process is evaluated using heavy-ions. Results included supply voltage variations show that multi-cell upsets dominate soft-error rates. Dual-port SRAM has higher cross-section than single-port SRAM but did not have any multi-cell upset across the bit-line direction. TCAD simulations showing the extent of the perturbation in the electric parameters as a function of particle LET support the experimental data.",

keywords = "FinFET technology, multi-bit upsets, scaling, soft errors, SRAM, TCAD modeling",

author = "N. Tam and Bhuva, {B. L.} and Massengill, {L. W.} and D. Ball and M. McCurdy and Alles, {M. L.} and I. Chatterjee",

year = "2015",

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doi = "10.1109/IRPS.2015.7112730",

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note = "IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",

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Tam, N, Bhuva, BL, Massengill, LW, Ball, D, McCurdy, M, Alles, ML & Chatterjee, I 2015, Multi-cell soft errors at the 16-nm FinFET technology node. in IEEE International Reliability Physics Symposium Proceedings. vol. 2015-May, 7112730, International Reliability Physics Symposium, Institute of Electrical and Electronics Engineers (IEEE), pp. 4B31-4B35, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, United States, 19/04/15. https://doi.org/10.1109/IRPS.2015.7112730

Multi-cell soft errors at the 16-nm FinFET technology node. / Tam, N.; Bhuva, B. L.; Massengill, L. W. et al.
IEEE International Reliability Physics Symposium Proceedings. Vol. 2015-May Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 4B31-4B35 7112730 (International Reliability Physics Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Tam N, Bhuva BL, Massengill LW, Ball D, McCurdy M, Alles ML et al. Multi-cell soft errors at the 16-nm FinFET technology node. In IEEE International Reliability Physics Symposium Proceedings. Vol. 2015-May. Institute of Electrical and Electronics Engineers (IEEE). 2015. p. 4B31-4B35. 7112730. (International Reliability Physics Symposium). doi: 10.1109/IRPS.2015.7112730

Multi-cell soft errors at the 16-nm FinFET technology node

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