Multi-channel power transistors shape up

Martin Kuball*

*Corresponding author for this work

Research output: Contribution to journalComment/debate (Academic Journal)peer-review

2 Citations (Scopus)

Abstract

A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
Original languageEnglish
Pages (from-to)553-554
Number of pages2
JournalNature Electronics
Volume2
Issue number12
DOIs
Publication statusPublished - 1 Dec 2019

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