Abstract
A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
Original language | English |
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Pages (from-to) | 553-554 |
Number of pages | 2 |
Journal | Nature Electronics |
Volume | 2 |
Issue number | 12 |
DOIs |
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Publication status | Published - 1 Dec 2019 |