Multi-channel power transistors shape up

Martin Kuball

doi:10.1038/s41928-019-0341-z

Multi-channel power transistors shape up

Martin Kuball^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Comment/debate (Academic Journal) › peer-review

5 Citations (Scopus)

Abstract

A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

Original language	English
Pages (from-to)	553-554
Number of pages	2
Journal	Nature Electronics
Volume	2
Issue number	12
DOIs	https://doi.org/10.1038/s41928-019-0341-z
Publication status	Published - 1 Dec 2019

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title = "Multi-channel power transistors shape up",

abstract = "A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.",

author = "Martin Kuball",

year = "2019",

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day = "1",

doi = "10.1038/s41928-019-0341-z",

language = "English",

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journal = "Nature Electronics",

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N2 - A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

AB - A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

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M3 - Comment/debate (Academic Journal)

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SN - 2520-1131

VL - 2

SP - 553

EP - 554

JO - Nature Electronics

JF - Nature Electronics

IS - 12

ER -

Multi-channel power transistors shape up

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