Abstract
In this paper, we propose a novel memristor model
with multinomial window function. The model describes the
range of behaviours that a fabricated device can exhibit
especially with respect to state transition behaviour with desired
non-linear memristor characteristics. This multinomial window
function can be obtained by fitting the measured data of a
practical memristor device. Because the window function fits the
measured data directly, the multinomial memristor model
characterizes a real memristor.
with multinomial window function. The model describes the
range of behaviours that a fabricated device can exhibit
especially with respect to state transition behaviour with desired
non-linear memristor characteristics. This multinomial window
function can be obtained by fitting the measured data of a
practical memristor device. Because the window function fits the
measured data directly, the multinomial memristor model
characterizes a real memristor.
| Original language | English |
|---|---|
| Title of host publication | Multinomial Memristor model for Simulations and Analysis |
| Pages | 57-61 |
| Number of pages | 4 |
| Publication status | Published - 2013 |