N-N pair effects on GaInNAs semiconductor optical amplifiers

D Alexandropoulos; Nikolaos Vogiatzis; YN Qiu; JM Pozo; D Syvridis; Judy M Rorison

doi:10.1002/pssc.200673227

N-N pair effects on GaInNAs semiconductor optical amplifiers

D Alexandropoulos, Nikolaos Vogiatzis, YN Qiu, JM Pozo, D Syvridis, Judy M Rorison

Department of Electrical & Electronic Engineering

Research output: Contribution to journal › Article (Academic Journal) › peer-review

1 Citation (Scopus)

Abstract

We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k center dot p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers.

Translated title of the contribution	N-N pair effects on GaInNAs semiconductor optical amplifiers
Original language	English
Pages (from-to)	655-659
Number of pages	5
Journal	physica status solidi (c)
Volume	4
Issue number	2
Early online date	7 Feb 2007
DOIs	https://doi.org/10.1002/pssc.200673227
Publication status	Published - Feb 2007
Event	International Conference on Superlattices, Nano-structures and Nano-devices (ICSNN 2006) - Istanbul, Turkey Duration: 30 Jul 2006 → 4 Aug 2006

Research Groups and Themes

Photonics and Quantum

Keywords

42.79.−e; 73.21.Fg; 78.55.Cr; 78.67.De

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@article{74d65365a0bf4f8b9acec71e954da853,

title = "N-N pair effects on GaInNAs semiconductor optical amplifiers",

abstract = "We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k center dot p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers.",

keywords = "42.79.−e; 73.21.Fg; 78.55.Cr; 78.67.De",

author = "D Alexandropoulos and Nikolaos Vogiatzis and YN Qiu and JM Pozo and D Syvridis and Rorison, {Judy M}",

year = "2007",

month = feb,

doi = "10.1002/pssc.200673227",

language = "English",

volume = "4",

pages = "655--659",

journal = "physica status solidi (c)",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "2",

note = "International Conference on Superlattices, Nano-structures and Nano-devices (ICSNN 2006), ICSNN ; Conference date: 30-07-2006 Through 04-08-2006",

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TY - JOUR

T1 - N-N pair effects on GaInNAs semiconductor optical amplifiers

AU - Alexandropoulos, D

AU - Vogiatzis, Nikolaos

AU - Qiu, YN

AU - Pozo, JM

AU - Syvridis, D

AU - Rorison, Judy M

PY - 2007/2

Y1 - 2007/2

N2 - We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k center dot p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers.

AB - We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k center dot p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers.

KW - 42.79.−e; 73.21.Fg; 78.55.Cr; 78.67.De

U2 - 10.1002/pssc.200673227

DO - 10.1002/pssc.200673227

M3 - Article (Academic Journal)

SN - 1862-6351

VL - 4

SP - 655

EP - 659

JO - physica status solidi (c)

JF - physica status solidi (c)

IS - 2

T2 - International Conference on Superlattices, Nano-structures and Nano-devices (ICSNN 2006)

Y2 - 30 July 2006 through 4 August 2006

ER -

N-N pair effects on GaInNAs semiconductor optical amplifiers

Abstract

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