N-N pair effects on GaInNAs semiconductor optical amplifiers

D Alexandropoulos, Nikolaos Vogiatzis, YN Qiu, JM Pozo, D Syvridis, Judy M Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

1 Citation (Scopus)

Abstract

We explore the effects of N-N pairs on the amplifying properties of GaInNAs based Semiconductor Optical Amplifiers. The bandstructure of GaInNAs is calculated with the 3 band anti-crossing model to account for the N-N pairs for the conduction band and k center dot p theory for the valence bands. For the calculation of the GaInNAs amplifier properties we adopt a multi-sectioning approach to the rate equation that accounts for amplified spontaneous emission. Based on these we discuss the merits of N-N pairs for GaInNAs semiconductor optical amplifiers.
Translated title of the contributionN-N pair effects on GaInNAs semiconductor optical amplifiers
Original languageEnglish
Pages (from-to)655-659
Number of pages5
Journalphysica status solidi (c)
Volume4
Issue number2
Early online date7 Feb 2007
DOIs
Publication statusPublished - Feb 2007
EventInternational Conference on Superlattices, Nano-structures and Nano-devices (ICSNN 2006) - Istanbul, Turkey
Duration: 30 Jul 20064 Aug 2006

Keywords

  • 42.79.−e; 73.21.Fg; 78.55.Cr; 78.67.De

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