Nanometer-scale epitaxial strain release in perovskite heterostructures using "SrAlOx" sliding buffer layers

H. K. Sato; J. A. Mundy; T. Higuchi; Y. Hikita; C. Bell; D. A. Muller; H. Y. Hwang; Chris Bell

doi:10.1063/1.3583459

Nanometer-scale epitaxial strain release in perovskite heterostructures using "SrAlOx" sliding buffer layers

H. K. Sato^*, J. A. Mundy, T. Higuchi, Y. Hikita, C. Bell, D. A. Muller, H. Y. Hwang, Chris Bell

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

6 Citations (Scopus)

Abstract

We demonstrate the strain release of LaAlO3 epitaxial films on SrTiO3 (001) by inserting ultrathin "SrAlOx" buffer layers. Although SrAlOx is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlOx, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO3 film and the SrTiO3 substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite films far below the thermodynamic critical thickness. (C) 2011 American Institute of Physics. [doi: 0.1063/1.3583459]

Original language	English
Article number	171901
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	17
DOIs	https://doi.org/10.1063/1.3583459
Publication status	Published - 25 Apr 2011

Keywords

THIN-FILMS
GAAS

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@article{9883123b0df647c5800fcc4edc92c071,

title = "Nanometer-scale epitaxial strain release in perovskite heterostructures using {"}SrAlOx{"} sliding buffer layers",

abstract = "We demonstrate the strain release of LaAlO3 epitaxial films on SrTiO3 (001) by inserting ultrathin {"}SrAlOx{"} buffer layers. Although SrAlOx is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlOx, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO3 film and the SrTiO3 substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite films far below the thermodynamic critical thickness. (C) 2011 American Institute of Physics. [doi: 0.1063/1.3583459]",

keywords = "THIN-FILMS, GAAS",

author = "Sato, {H. K.} and Mundy, {J. A.} and T. Higuchi and Y. Hikita and C. Bell and Muller, {D. A.} and Hwang, {H. Y.} and Chris Bell",

year = "2011",

month = apr,

day = "25",

doi = "10.1063/1.3583459",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

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TY - JOUR

T1 - Nanometer-scale epitaxial strain release in perovskite heterostructures using "SrAlOx" sliding buffer layers

AU - Sato, H. K.

AU - Mundy, J. A.

AU - Higuchi, T.

AU - Hikita, Y.

AU - Bell, C.

AU - Muller, D. A.

AU - Hwang, H. Y.

AU - Bell, Chris

PY - 2011/4/25

Y1 - 2011/4/25

N2 - We demonstrate the strain release of LaAlO3 epitaxial films on SrTiO3 (001) by inserting ultrathin "SrAlOx" buffer layers. Although SrAlOx is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlOx, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO3 film and the SrTiO3 substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite films far below the thermodynamic critical thickness. (C) 2011 American Institute of Physics. [doi: 0.1063/1.3583459]

AB - We demonstrate the strain release of LaAlO3 epitaxial films on SrTiO3 (001) by inserting ultrathin "SrAlOx" buffer layers. Although SrAlOx is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlOx, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO3 film and the SrTiO3 substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite films far below the thermodynamic critical thickness. (C) 2011 American Institute of Physics. [doi: 0.1063/1.3583459]

KW - THIN-FILMS

KW - GAAS

U2 - 10.1063/1.3583459

DO - 10.1063/1.3583459

M3 - Article (Academic Journal)

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171901

ER -

Nanometer-scale epitaxial strain release in perovskite heterostructures using "SrAlOx" sliding buffer layers

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