Abstract
We demonstrate the strain release of LaAlO3 epitaxial films on SrTiO3 (001) by inserting ultrathin "SrAlOx" buffer layers. Although SrAlOx is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlOx, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO3 film and the SrTiO3 substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite films far below the thermodynamic critical thickness. (C) 2011 American Institute of Physics. [doi: 0.1063/1.3583459]
| Original language | English |
|---|---|
| Article number | 171901 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 25 Apr 2011 |
Keywords
- THIN-FILMS
- GAAS
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