Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices

G Riedel, J.W Pomeroy, K.P Hilton, J.O Maclean, D.J Wallis, M.J Uren, T Martin, M Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

40 Citations (Scopus)

Abstract

Time-resolved Raman thermography, with a temporal resolution of similar to 10 ns, was used to study the thermal dynamics of AlGaN/GaN electronic devices (high-electron mobility transistors and ungated devices). Heat diffusion from the device active region into the substrate and within the devices was studied. Delays in the thermal response with respect to the electrical pulse were determined at different locations in the devices. Quasi-adiabatic heating of the AlGaN/GaN devices is illustrated within the first similar to 70 ns of device operation. The temperature of devices on SiC was found to reach similar to 25% of the dc temperature when operated with 200-ns-long electrical pulses.
Translated title of the contributionNanosecond timescale thermal dynamics of AlGaN/GaN electronic devices
Original languageEnglish
Pages (from-to)416 - 418
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number5
DOIs
Publication statusPublished - May 2008

Bibliographical note

Publisher: IEEE Institute Electrical Electronics Engineers Inc

Structured keywords

  • CDTR

Fingerprint

Dive into the research topics of 'Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices'. Together they form a unique fingerprint.

Cite this