Near field optical spectroscopy of GaN/AIN quantum dots

A Neogi; BP Gorman; H Morkoc; T Kawazoe; M Ohtsu; M Kuball

Near field optical spectroscopy of GaN/AIN quantum dots

A Neogi, BP Gorman, H Morkoc, T Kawazoe, M Ohtsu, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Abstract

We investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of similar to 50-60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [1011] facets.

Translated title of the contribution	Near field optical spectroscopy of GaN/AIN quantum dots
Original language	English
Pages (from-to)	317 - 322
Journal	Material Research Society Symposium Proceedings
Volume	831
Issue number	Symposium E – GaN, AlN, InN, and Their Alloys
Publication status	Published - 2005

Bibliographical note

Editors: Wetzel C, Gil B, Kuzuhara M, Manfra M
ISBN: 1558997792
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN, AIN, InN and Their Alloys,2004 MRS Fall Meeting Boston
Conference Organiser: Materials Research Society

Research Groups and Themes

CDTR

Handle.net

Persistent link

Cite this

@article{92954743bc7d4033aadf9505a90cd6aa,

title = "Near field optical spectroscopy of GaN/AIN quantum dots",

abstract = "We investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of similar to 50-60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [1011] facets.",

author = "A Neogi and BP Gorman and H Morkoc and T Kawazoe and M Ohtsu and M Kuball",

note = "Editors: Wetzel C, Gil B, Kuzuhara M, Manfra M ISBN: 1558997792 Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN, AIN, InN and Their Alloys,2004 MRS Fall Meeting Boston Conference Organiser: Materials Research Society",

year = "2005",

language = "English",

volume = "831",

pages = "317 -- 322",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium E – GaN, AlN, InN, and Their Alloys",

}

TY - JOUR

T1 - Near field optical spectroscopy of GaN/AIN quantum dots

AU - Neogi, A

AU - Gorman, BP

AU - Morkoc, H

AU - Kawazoe, T

AU - Ohtsu, M

AU - Kuball, M

N1 - Editors: Wetzel C, Gil B, Kuzuhara M, Manfra M ISBN: 1558997792 Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN, AIN, InN and Their Alloys,2004 MRS Fall Meeting Boston Conference Organiser: Materials Research Society

PY - 2005

Y1 - 2005

N2 - We investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of similar to 50-60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [1011] facets.

AB - We investigate the spatial distribution and emission properties of self-assembled GaN/AlN quantum dots. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of similar to 50-60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [1011] facets.

M3 - Article (Academic Journal)

SN - 0272-9172

VL - 831

SP - 317

EP - 322

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

IS - Symposium E – GaN, AlN, InN, and Their Alloys

ER -

Near field optical spectroscopy of GaN/AIN quantum dots

Abstract

Bibliographical note

Research Groups and Themes

Handle.net

Fingerprint

Cite this