Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

Michael J Uren, Marco Silvestri, Markus Caesar, James W Pomeroy, Godefridus Hurkx, Jeroen Croon, Jan Šonský, Martin Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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Abstract

Carbon is a deep-level p-type acceptor in GaN and is used successfully in high-voltage AlGaN/GaN HEMT processes to generate a semi-insulating buffer for off-state leakage and breakdown suppression. However, p-type doping has also been linked to dynamic RON dispersion and current-collapse (CC) due to the absence of an Ohmic contact to the floating GaN buffer region. We demonstrate that current-collapse free C-doped HEMTs can be realized using epitaxial defects which short the floating buffer to the 2DEG.
Original languageEnglish
Title of host publicationProceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Subtitle of host publicationMay 19th - 22nd 2014, Denver, Colorado, USA
Pages317-319
Number of pages3
Publication statusPublished - 19 May 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - Denver, Colorado, United States
Duration: 19 May 201422 May 2014

Conference

Conference2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Abbreviated titleCS-MANTECH
CountryUnited States
CityDenver, Colorado
Period19/05/1422/05/14

Structured keywords

  • CDTR

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