Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

Michael J Uren; Marco Silvestri; Markus Caesar; James W Pomeroy; Godefridus Hurkx; Jeroen Croon; Jan Šonský; Martin Kuball

Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

Michael J Uren
, Marco Silvestri
, Markus Caesar
, James W Pomeroy
, Godefridus Hurkx
, Jeroen Croon
, Jan Šonský
, Martin Kuball

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

179 Downloads (Pure)

Abstract

Carbon is a deep-level p-type acceptor in GaN and is used successfully in high-voltage AlGaN/GaN HEMT processes to generate a semi-insulating buffer for off-state leakage and breakdown suppression. However, p-type doping has also been linked to dynamic RON dispersion and current-collapse (CC) due to the absence of an Ohmic contact to the floating GaN buffer region. We demonstrate that current-collapse free C-doped HEMTs can be realized using epitaxial defects which short the floating buffer to the 2DEG.

Original language	English
Title of host publication	Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Subtitle of host publication	May 19th - 22nd 2014, Denver, Colorado, USA
Pages	317-319
Number of pages	3
Publication status	Published - 19 May 2014
Event	2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) - Denver, Colorado, United States Duration: 19 May 2014 → 22 May 2014

Conference

Conference	2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
Abbreviated title	CS-MANTECH
Country/Territory	United States
City	Denver, Colorado
Period	19/05/14 → 22/05/14

Research Groups and Themes

CDTR

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http://www.csmantech.org/Digests/2014/papers/089.pdf

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Persistent link

Silicon Compatible GaN Power Electronics
Kuball, M. H. H. (Principal Investigator)
1/03/13 → 31/08/18
Project: Research
PEARGaN
Kuball, M. H. H. (Principal Investigator)
1/10/12 → 1/10/14
Project: Research

Cite this

Uren, M. J., Silvestri, M., Caesar, M., Pomeroy, J. W., Hurkx, G., Croon, J., Šonský, J., & Kuball, M. (2014). Need for Defects in Floating-Buffer AlGaN/GaN HEMTs. In Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 19th - 22nd 2014, Denver, Colorado, USA (pp. 317-319). Article 16.2 http://www.csmantech.org/Digests/2014/papers/089.pdf

@inproceedings{9857fcf32e3d4a2484202c2252123cf6,

title = "Need for Defects in Floating-Buffer AlGaN/GaN HEMTs",

abstract = "Carbon is a deep-level p-type acceptor in GaN and is used successfully in high-voltage AlGaN/GaN HEMT processes to generate a semi-insulating buffer for off-state leakage and breakdown suppression. However, p-type doping has also been linked to dynamic RON dispersion and current-collapse (CC) due to the absence of an Ohmic contact to the floating GaN buffer region. We demonstrate that current-collapse free C-doped HEMTs can be realized using epitaxial defects which short the floating buffer to the 2DEG.",

author = "Uren, \{Michael J\} and Marco Silvestri and Markus Caesar and Pomeroy, \{James W\} and Godefridus Hurkx and Jeroen Croon and Jan {\v S}onsk{\'y} and Martin Kuball",

year = "2014",

month = may,

day = "19",

language = "English",

isbn = "9781893580237",

pages = "317--319",

booktitle = "Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)",

note = "2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), CS-MANTECH ; Conference date: 19-05-2014 Through 22-05-2014",

}

Uren, MJ, Silvestri, M, Caesar, M, Pomeroy, JW, Hurkx, G, Croon, J, Šonský, J & Kuball, M 2014, Need for Defects in Floating-Buffer AlGaN/GaN HEMTs. in Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 19th - 22nd 2014, Denver, Colorado, USA., 16.2, pp. 317-319, 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Denver, Colorado, United States, 19/05/14. <http://www.csmantech.org/Digests/2014/papers/089.pdf>

Need for Defects in Floating-Buffer AlGaN/GaN HEMTs. / Uren, Michael J; Silvestri, Marco; Caesar, Markus et al.
Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 19th - 22nd 2014, Denver, Colorado, USA. 2014. p. 317-319 16.2.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

AU - Uren, Michael J

AU - Silvestri, Marco

AU - Caesar, Markus

AU - Pomeroy, James W

AU - Hurkx, Godefridus

AU - Croon, Jeroen

AU - Šonský, Jan

AU - Kuball, Martin

PY - 2014/5/19

Y1 - 2014/5/19

N2 - Carbon is a deep-level p-type acceptor in GaN and is used successfully in high-voltage AlGaN/GaN HEMT processes to generate a semi-insulating buffer for off-state leakage and breakdown suppression. However, p-type doping has also been linked to dynamic RON dispersion and current-collapse (CC) due to the absence of an Ohmic contact to the floating GaN buffer region. We demonstrate that current-collapse free C-doped HEMTs can be realized using epitaxial defects which short the floating buffer to the 2DEG.

AB - Carbon is a deep-level p-type acceptor in GaN and is used successfully in high-voltage AlGaN/GaN HEMT processes to generate a semi-insulating buffer for off-state leakage and breakdown suppression. However, p-type doping has also been linked to dynamic RON dispersion and current-collapse (CC) due to the absence of an Ohmic contact to the floating GaN buffer region. We demonstrate that current-collapse free C-doped HEMTs can be realized using epitaxial defects which short the floating buffer to the 2DEG.

M3 - Conference Contribution (Conference Proceeding)

SN - 9781893580237

SP - 317

EP - 319

BT - Proceedings of 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)

T2 - 2014 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)

Y2 - 19 May 2014 through 22 May 2014

ER -

Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

Abstract

Conference

Research Groups and Themes

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Projects

Silicon Compatible GaN Power Electronics

PEARGaN

Cite this