Negative dynamic Ron in AlGaN/GaN power devices

P. Moens, M. J. Uren, A. Banerjee, M. Meneghini, B. Padmanabhan, W. Jeon, S. Karboyan, M. Kuball, G. Meneghesso, E. Zanoni, M. Tack

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

19 Citations (Scopus)

Abstract

Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.

Original languageEnglish
Title of host publicationProceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages97-100
Number of pages4
ISBN (Electronic)9784886860958
DOIs
Publication statusPublished - 21 Jul 2017
Event29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan
Duration: 28 May 20171 Jun 2017

Conference

Conference29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017
Country/TerritoryJapan
CitySapporo
Period28/05/171/06/17

Structured keywords

  • CDTR

Keywords

  • AlGaN/GaN power devices
  • Charge trapping
  • Dynamic Ron

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