Negative dynamic Ron in AlGaN/GaN power devices

P. Moens; M. J. Uren; A. Banerjee; M. Meneghini; B. Padmanabhan; W. Jeon; S. Karboyan; M. Kuball; G. Meneghesso; E. Zanoni; M. Tack

doi:10.23919/ISPSD.2017.7988902

Negative dynamic Ron in AlGaN/GaN power devices

P. Moens, M. J. Uren, A. Banerjee, M. Meneghini, B. Padmanabhan, W. Jeon, S. Karboyan, M. Kuball, G. Meneghesso, E. Zanoni, M. Tack

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

29 Citations (Scopus)

Abstract

Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic R_on are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.

Original language	English
Title of host publication	Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	97-100
Number of pages	4
ISBN (Electronic)	9784886860958
DOIs	https://doi.org/10.23919/ISPSD.2017.7988902
Publication status	Published - 21 Jul 2017
Event	29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan Duration: 28 May 2017 → 1 Jun 2017

Conference

Conference	29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017
Country/Territory	Japan
City	Sapporo
Period	28/05/17 → 1/06/17

Research Groups and Themes

CDTR

Keywords

AlGaN/GaN power devices
Charge trapping
Dynamic Ron

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10.23919/ISPSD.2017.7988902

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Moens, P., Uren, M. J., Banerjee, A., Meneghini, M., Padmanabhan, B., Jeon, W., Karboyan, S., Kuball, M., Meneghesso, G., Zanoni, E., & Tack, M. (2017). Negative dynamic Ron in AlGaN/GaN power devices. In Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017 (pp. 97-100). Article 7988902 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.23919/ISPSD.2017.7988902

@inproceedings{17f663b224f14b70a54b7fd684ffaa7f,

title = "Negative dynamic Ron in AlGaN/GaN power devices",

abstract = "Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.",

keywords = "AlGaN/GaN power devices, Charge trapping, Dynamic Ron",

author = "P. Moens and Uren, {M. J.} and A. Banerjee and M. Meneghini and B. Padmanabhan and W. Jeon and S. Karboyan and M. Kuball and G. Meneghesso and E. Zanoni and M. Tack",

year = "2017",

month = jul,

day = "21",

doi = "10.23919/ISPSD.2017.7988902",

language = "English",

pages = "97--100",

booktitle = "Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 ; Conference date: 28-05-2017 Through 01-06-2017",

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Moens, P, Uren, MJ, Banerjee, A, Meneghini, M, Padmanabhan, B, Jeon, W, Karboyan, S, Kuball, M, Meneghesso, G, Zanoni, E & Tack, M 2017, Negative dynamic Ron in AlGaN/GaN power devices. in Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017., 7988902, Institute of Electrical and Electronics Engineers (IEEE), pp. 97-100, 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017, Sapporo, Japan, 28/05/17. https://doi.org/10.23919/ISPSD.2017.7988902

Negative dynamic Ron in AlGaN/GaN power devices. / Moens, P.; Uren, M. J.; Banerjee, A. et al.
Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017. Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 97-100 7988902.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Negative dynamic Ron in AlGaN/GaN power devices

AU - Moens, P.

AU - Uren, M. J.

AU - Banerjee, A.

AU - Meneghini, M.

AU - Padmanabhan, B.

AU - Jeon, W.

AU - Karboyan, S.

AU - Kuball, M.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Tack, M.

PY - 2017/7/21

Y1 - 2017/7/21

N2 - Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.

AB - Through optimization of the GaN buffer structure, 650V rated AlGaN/GaN power devices with negative dynamic Ron are obtained. By judicious tuning of the resistivity of the [C]-doped and unintentionally-doped (UID) layers (i.e. the charge transport properties in these layers), positive rather than the deleterious negative charged trapping can be achieved. Long term reliability testing shows that the positive charge can be retained for days.

KW - AlGaN/GaN power devices

KW - Charge trapping

KW - Dynamic Ron

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U2 - 10.23919/ISPSD.2017.7988902

DO - 10.23919/ISPSD.2017.7988902

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:85028290133

SP - 97

EP - 100

BT - Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017

Y2 - 28 May 2017 through 1 June 2017

ER -

Negative dynamic Ron in AlGaN/GaN power devices

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