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Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Research output: Contribution to journalArticle

Original languageEnglish
Article number8529209
Pages (from-to)2862-2869
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number12
Early online date9 Nov 2018
DOIs
DateAccepted/In press - 26 Jul 2018
DateE-pub ahead of print - 9 Nov 2018
DatePublished (current) - 1 Dec 2018

Abstract

Current transient spectroscopy was used to measure the impact of neutron irradiation on output current-limiting charge traps in AlGaN/GaN high electron mobility transistors with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14-MeV neutron irradiation of 2 times 10 13 n/cm 2 and above. Irradiation to a high dose of as much as 7.8 times 10 14 n/cm 2 , which is comparable to eight years exposure to a harsh radiation environment, such as the International Thermonuclear Experimental Reactor neutral-beam injector prototype, increased trapped charge density and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on the radiation transport calculations.

    Structured keywords

  • CDTR

    Research areas

  • 14-MeV neutron, displacement damage (DD), gallium nitride (GaN), gate-lag, high electron mobility transistor (HEMT), III-V semiconductors, switching transients

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    Rights statement: This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at https://ieeexplore.ieee.org/document/8529209 . Please refer to any applicable terms of use of the publisher.

    Accepted author manuscript, 2 MB, PDF document

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