| Translated title of the contribution | New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors |
|---|---|
| Original language | English |
| Pages (from-to) | 163 - 171 |
| Number of pages | 8 |
| Journal | Journal de Physique IV |
| Volume | 1 |
| Publication status | Published - 1991 |
New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors
PS Aplin
Research output: Contribution to journal › Article (Academic Journal) › peer-review