New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors

PS Aplin

Research output: Contribution to journal › Article (Academic Journal) › peer-review

Translated title of the contribution	New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors
Original language	English
Pages (from-to)	163 - 171
Number of pages	8
Journal	Journal de Physique IV
Volume	1
Publication status	Published - 1991

Other: # ISBN no. 2865831729

Handle.net

@article{699a3d82dbe84d2ab71c82ae82127140,

title = "New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors",

author = "PS Aplin",

note = "Other: \# ISBN no. 2865831729",

year = "1991",

language = "English",

volume = "1",

pages = "163 -- 171",

journal = "Journal de Physique IV",

issn = "1951-6401",

publisher = "Springer Verlag",

}

TY - JOUR

T1 - New development in confocal scanning optical microscopy and its application to the study of electrically active defects in semiconductors

AU - Aplin, PS

N1 - Other: # ISBN no. 2865831729

PY - 1991

Y1 - 1991

M3 - Article (Academic Journal)

SN - 1951-6401

SN - 1764-7177

VL - 1

SP - 163

EP - 171

JO - Journal de Physique IV

JF - Journal de Physique IV

ER -