Non-ideal memristors for a non-ideal world

Ella Gale*

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

2 Citations (Scopus)

Abstract

Memristors have pinched hysteresis loops in the V-I plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper, we extend memristor theory to produce different types of non-ideality and find that: including a background current (such as an ionic current) moves the crossing point away from zero; including a degradation resistance (that increases with experimental time) leads to an asymmetry; modelling a low resistance filament in parallel describes triangular V-I curves with a straight-line low resistance state. A novel measurement of hysteresis asymmetry was introduced based on hysteresis and it was found that which lobe was bigger depended on the size of the breaking current relative to the memristance. The hysteresis varied differently with each type of non-ideality, suggesting that measurements of several device I-V curves and calculation of these parameters could give an indication of the underlying mechanism.

Original languageEnglish
Pages (from-to)229-238
Number of pages10
Journalphysica status solidi (a)
Volume212
Issue number2
DOIs
Publication statusPublished - 2015

Keywords

  • Extended-memristor
  • Memory-conservation
  • Memristor
  • MEOC
  • Non-ideal memristor
  • Simulation

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