Nonlinear gain in semiconductor ring lasers

CJ Born, G Yuan, Z Wang, S Yu

Research output: Contribution to journalArticle (Academic Journal)peer-review

14 Citations (Scopus)


Nonlinear gain in semiconductor ring lasers has been investigated theoretically based on density-matrix equations, including the effects of carrier density pulsations, carrier heating, spectral hole burning, and carrier diffusion. Expressions for nonlinear susceptibilities are derived analytically and compared with previous theoretical results. It is found that carrier diffusion have strong effects on both the amplitude and beat frequency dependency of the nonlinear susceptibilities. Various nonlinear parameters are also calculated based on the expressions obtained, and are consistent with published experimental results by other groups.
Translated title of the contributionNonlinear gain in semiconductor ring lasers
Original languageEnglish
Pages (from-to)1055 - 1064
Number of pages10
JournalIEEE Journal of Quantum Electronics
Issue number11
Publication statusPublished - Nov 2008

Bibliographical note

Publisher: IEEE


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