Nonlinearity and Power Handling Characterization of an Optically Reconfigurable Microwave Switch

Weiran Pang, Souheil Ben Smida, Martin Cryan

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

5 Citations (Scopus)
260 Downloads (Pure)

Abstract

This paper presents a highly linear optically reconfigurable microwave switch with high power handling ability. A silicon superstrate with bottom illumination is employed. A transparent substrate is used and two different microstrip gap distances are characterized by two-tone nonlinearity measurement with different tone spacings and optical powers. A maximum third order intercept point referred to input power of +78.5dBm has been obtained and the maximum microwave power tested was over 30W per tone close to 2 GHz. Thermal imaging has been used to observe the device hot-spots as a function of RF power.

Original languageEnglish
Title of host publication2018 IEEE/MTT-S International Microwave Symposium (IMS 2018)
Subtitle of host publicationProceedings of a meeting held 10-15 June 2018, Philadelphia, Pennsylvania, USA.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages420-422
Number of pages3
Volume2018-June
ISBN (Electronic)9781538650677
ISBN (Print)9781538650684
DOIs
Publication statusPublished - 17 Aug 2018
Event2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 - Philadelphia, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

NameIEEE/MTT-S International Microwave Symposium - IMS
PublisherIEEE
ISSN (Print)0149-645X

Conference

Conference2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Country/TerritoryUnited States
CityPhiladelphia
Period10/06/1815/06/18

Keywords

  • Microwave device
  • Nonlinearity characterization
  • Photoconducting switches

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