Novel thermal management and its analysis in GaN electronics

Martin Kuball, Julian Anaya Calvo, Roland B. Simon, James W. Pomeroy

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

1 Citation (Scopus)


GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to 'extremes'. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Print)9784902339314
Publication statusPublished - 25 Mar 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: 4 Nov 20147 Nov 2014


Conference2014 Asia-Pacific Microwave Conference, APMC 2014

Structured keywords

  • CDTR


  • Bulk GaN substrates
  • Diamond
  • GaN electronics
  • Reliability
  • Thermal management


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