Novel thermal management and its analysis in GaN electronics

Martin Kuball; Julian Anaya Calvo; Roland B. Simon; James W. Pomeroy

Novel thermal management and its analysis in GaN electronics

Martin Kuball, Julian Anaya Calvo, Roland B. Simon, James W. Pomeroy

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

1 Citation (Scopus)

Abstract

GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to 'extremes'. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.

Original language	English
Title of host publication	2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	920-922
Number of pages	3
ISBN (Print)	9784902339314
Publication status	Published - 25 Mar 2014
Event	2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan Duration: 4 Nov 2014 → 7 Nov 2014

Conference

Conference	2014 Asia-Pacific Microwave Conference, APMC 2014
Country/Territory	Japan
City	Sendai
Period	4/11/14 → 7/11/14

Research Groups and Themes

CDTR

Keywords

Bulk GaN substrates
Diamond
GaN electronics
Reliability
Thermal management

Handle.net

Persistent link

Cite this

@inproceedings{61da227a2a3d48a2b6c0a254e1a28dd5,

title = "Novel thermal management and its analysis in GaN electronics",

abstract = "GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to 'extremes'. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.",

keywords = "Bulk GaN substrates, Diamond, GaN electronics, Reliability, Thermal management",

author = "Martin Kuball and Calvo, {Julian Anaya} and Simon, {Roland B.} and Pomeroy, {James W.}",

year = "2014",

month = mar,

day = "25",

language = "English",

isbn = "9784902339314",

pages = "920--922",

booktitle = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 Asia-Pacific Microwave Conference, APMC 2014 ; Conference date: 04-11-2014 Through 07-11-2014",

}

Novel thermal management and its analysis in GaN electronics. / Kuball, Martin; Calvo, Julian Anaya; Simon, Roland B. et al.
2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014. Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 920-922 7067578.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Novel thermal management and its analysis in GaN electronics

AU - Kuball, Martin

AU - Calvo, Julian Anaya

AU - Simon, Roland B.

AU - Pomeroy, James W.

PY - 2014/3/25

Y1 - 2014/3/25

N2 - GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to 'extremes'. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.

AB - GaN in microwave and power electronics enables performances of systems and their safe operating area to be driven to 'extremes'. When this challenge is taken up, thermal management is one of the major issues to be addressed. This includes heat transfer limitations across interfaces, however also the potential of incorporating novel materials such as diamond and also bulk GaN into GaN electronics to improve thermal management and device reliability. Thermal parameters of these novel device systems and their implications on the channel temperature in the devices are however at present often not well known. Our latest results in this field are presented.

KW - Bulk GaN substrates

KW - Diamond

KW - GaN electronics

KW - Reliability

KW - Thermal management

UR - http://www.scopus.com/inward/record.url?scp=84949101353&partnerID=8YFLogxK

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84949101353

SN - 9784902339314

SP - 920

EP - 922

BT - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 2014 Asia-Pacific Microwave Conference, APMC 2014

Y2 - 4 November 2014 through 7 November 2014

ER -

Novel thermal management and its analysis in GaN electronics

Abstract

Conference

Research Groups and Themes

Keywords

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