Novel Thermal Management of GaN Electronics: Diamond Substrates

Martin Kuball; James W. Pomeroy; Julian Anaya Calvo; Huarui Sun; Roland B. Simon; Daniel Francis; Firooz Faili; Daniel Twitchen; Stefano Rossi; Mohammed Alomari; Erhard Kohn; Lajos Tóth; Béla Pécz

doi:10.1115/IPACK2015-48145

Novel Thermal Management of GaN Electronics: Diamond Substrates

Martin Kuball, James W. Pomeroy, Julian Anaya Calvo, Huarui Sun, Roland B. Simon, Daniel Francis, Firooz Faili, Daniel Twitchen, Stefano Rossi, Mohammed Alomari, Erhard Kohn, Lajos Tóth, Béla Pécz

School of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

4 Citations (Scopus)

348 Downloads (Pure)

Abstract

Microwave and power electronics based on GaN enables the performance of systems and their safe operating area to be driven to 'extremes'. One of the major issues that then arises is thermal management. This includes heat transfer limitations across interfaces, however also the need of incorporating novel high thermal conductivity materials such as diamond. Thermal parameters of these novel device systems and their implications on the near junction temperature in the devices are not well known. The role of interfaces between the GaN transistor and the diamond substrate, and of the diamond thermal properties themselves near this interface are discussed, and novel thermal characterization approaches, such as enabling fast determination of the thermal resistance on the wafer level, as well as of lateral diamond thermal conductivity, are presented.

Original language	English
Title of host publication	ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels
Subtitle of host publication	Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays
Publisher	American Society of Mechanical Engineers (ASME)
Number of pages	5
Volume	3
ISBN (Print)	9780791856901
DOIs	https://doi.org/10.1115/IPACK2015-48145
Publication status	Published - 9 Jul 2015
Event	ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2015, collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels - San Francisco, United States Duration: 6 Jul 2015 → 9 Jul 2015

Conference

Conference	ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2015, collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels
Country	United States
City	San Francisco
Period	6/07/15 → 9/07/15

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10.1115/IPACK2015-48145

Kuball - InterPack2015 48145 FINAL
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Kuball, M., Pomeroy, J. W., Calvo, J. A., Sun, H., Simon, R. B., Francis, D., Faili, F., Twitchen, D., Rossi, S., Alomari, M., Kohn, E., Tóth, L., & Pécz, B. (2015). Novel Thermal Management of GaN Electronics: Diamond Substrates. In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays (Vol. 3). [IPACK 2015-48145] American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/IPACK2015-48145

Kuball, Martin ; Pomeroy, James W. ; Calvo, Julian Anaya ; Sun, Huarui ; Simon, Roland B. ; Francis, Daniel ; Faili, Firooz ; Twitchen, Daniel ; Rossi, Stefano ; Alomari, Mohammed ; Kohn, Erhard ; Tóth, Lajos ; Pécz, Béla. / Novel Thermal Management of GaN Electronics : Diamond Substrates. ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays. Vol. 3 American Society of Mechanical Engineers (ASME), 2015.

@inproceedings{35dc4f6bba6b4732b15879c8d1390b30,

title = "Novel Thermal Management of GaN Electronics: Diamond Substrates",

abstract = "Microwave and power electronics based on GaN enables the performance of systems and their safe operating area to be driven to 'extremes'. One of the major issues that then arises is thermal management. This includes heat transfer limitations across interfaces, however also the need of incorporating novel high thermal conductivity materials such as diamond. Thermal parameters of these novel device systems and their implications on the near junction temperature in the devices are not well known. The role of interfaces between the GaN transistor and the diamond substrate, and of the diamond thermal properties themselves near this interface are discussed, and novel thermal characterization approaches, such as enabling fast determination of the thermal resistance on the wafer level, as well as of lateral diamond thermal conductivity, are presented.",

author = "Martin Kuball and Pomeroy, {James W.} and Calvo, {Julian Anaya} and Huarui Sun and Simon, {Roland B.} and Daniel Francis and Firooz Faili and Daniel Twitchen and Stefano Rossi and Mohammed Alomari and Erhard Kohn and Lajos T{\'o}th and B{\'e}la P{\'e}cz",

year = "2015",

month = jul,

day = "9",

doi = "10.1115/IPACK2015-48145",

language = "English",

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booktitle = "ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels",

publisher = "American Society of Mechanical Engineers (ASME)",

address = "United States",

note = "ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2015, collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels ; Conference date: 06-07-2015 Through 09-07-2015",

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Kuball, M , Pomeroy, JW, Calvo, JA, Sun, H, Simon, RB, Francis, D, Faili, F, Twitchen, D, Rossi, S, Alomari, M, Kohn, E, Tóth, L & Pécz, B 2015, Novel Thermal Management of GaN Electronics: Diamond Substrates. in ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays. vol. 3, IPACK 2015-48145, American Society of Mechanical Engineers (ASME), ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2015, collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels, San Francisco, United States, 6/07/15. https://doi.org/10.1115/IPACK2015-48145

Novel Thermal Management of GaN Electronics : Diamond Substrates. / Kuball, Martin ; Pomeroy, James W.; Calvo, Julian Anaya; Sun, Huarui; Simon, Roland B.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla.

ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays. Vol. 3 American Society of Mechanical Engineers (ASME), 2015. IPACK 2015-48145.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Novel Thermal Management of GaN Electronics

T2 - ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2015, collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels

AU - Kuball, Martin

AU - Pomeroy, James W.

AU - Calvo, Julian Anaya

AU - Sun, Huarui

AU - Simon, Roland B.

AU - Francis, Daniel

AU - Faili, Firooz

AU - Twitchen, Daniel

AU - Rossi, Stefano

AU - Alomari, Mohammed

AU - Kohn, Erhard

AU - Tóth, Lajos

AU - Pécz, Béla

PY - 2015/7/9

Y1 - 2015/7/9

N2 - Microwave and power electronics based on GaN enables the performance of systems and their safe operating area to be driven to 'extremes'. One of the major issues that then arises is thermal management. This includes heat transfer limitations across interfaces, however also the need of incorporating novel high thermal conductivity materials such as diamond. Thermal parameters of these novel device systems and their implications on the near junction temperature in the devices are not well known. The role of interfaces between the GaN transistor and the diamond substrate, and of the diamond thermal properties themselves near this interface are discussed, and novel thermal characterization approaches, such as enabling fast determination of the thermal resistance on the wafer level, as well as of lateral diamond thermal conductivity, are presented.

AB - Microwave and power electronics based on GaN enables the performance of systems and their safe operating area to be driven to 'extremes'. One of the major issues that then arises is thermal management. This includes heat transfer limitations across interfaces, however also the need of incorporating novel high thermal conductivity materials such as diamond. Thermal parameters of these novel device systems and their implications on the near junction temperature in the devices are not well known. The role of interfaces between the GaN transistor and the diamond substrate, and of the diamond thermal properties themselves near this interface are discussed, and novel thermal characterization approaches, such as enabling fast determination of the thermal resistance on the wafer level, as well as of lateral diamond thermal conductivity, are presented.

UR - http://www.scopus.com/inward/record.url?scp=84953889177&partnerID=8YFLogxK

U2 - 10.1115/IPACK2015-48145

DO - 10.1115/IPACK2015-48145

M3 - Conference Contribution (Conference Proceeding)

AN - SCOPUS:84953889177

SN - 9780791856901

VL - 3

BT - ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels

PB - American Society of Mechanical Engineers (ASME)

Y2 - 6 July 2015 through 9 July 2015

ER -

Kuball M , Pomeroy JW, Calvo JA, Sun H, Simon RB, Francis D et al. Novel Thermal Management of GaN Electronics: Diamond Substrates. In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays. Vol. 3. American Society of Mechanical Engineers (ASME). 2015. IPACK 2015-48145 https://doi.org/10.1115/IPACK2015-48145