Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides

Lifeng Chen*, Katrina A Morgan, Ghada A. Alzaidy, Chung Che Huang, Daniel Ho, Mike Taverne, Xu Zheng, Zhong Ren, Zhuo Feng, Ioannis Zeimpekis, Daniel W. Hewak, John Rarity

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

3 Citations (Scopus)
53 Downloads (Pure)

Abstract

Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photonic bandgap known to date and supports a complete bandgap for the lowest refractive index contrast ratio down to nhigh/nlow ∼1.9. We confirm this threshold by measuring a complete photonic bandgap in the infrared region in Sn-S-O (n∽1.9) and Ge-Sb-S-O (n∽2) inverse rod-connected diamond structures. The structures were fabricated using a low-temperature chemical vapor deposition process, via a single-inversion technique. This provides a reliable fabrication technique of complete photonic bandgap materials and expands the library of backfilling materials, leading to a wide range of future photonic applications.
Original languageEnglish
Pages (from-to)1248-1254
Number of pages7
JournalACS Photonics
Volume6
Issue number5
Early online date9 Apr 2019
DOIs
Publication statusPublished - 15 May 2019

Keywords

  • direct laser writing
  • two-photon lithography
  • chemical vapor deposition
  • chalcogenide materials
  • photonic bandgap
  • three-dimensional photonic crystals

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