The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons (2X) in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shall recombination.
|Number of pages||4|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 15 Apr 2001|