Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

J J Finley, P W Fry, A D Ashmore, A Lemaitre, A I Tartakovskii, R Oulton, D J Mowbray, M S Skolnick, M Hopkinson, P D Buckle, P A Maksym

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Abstract

The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons (2X) in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shall recombination.

Original languageEnglish
Article number161305
Pages (from-to)-
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume63
Issue number16
Publication statusPublished - 15 Apr 2001

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