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Abstract
We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.
Original language | English |
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Article number | 8101503 |
Pages (from-to) | 55-58 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2018 |
Research Groups and Themes
- CDTR
Keywords
- AlGaN
- mobility
- ohmic contact
- Schottky
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Dive into the research topics of 'Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices'. Together they form a unique fingerprint.Projects
- 1 Finished
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High Performance Buffers for RF GaN Electronics
Kuball, M. H. H. (Principal Investigator)
17/11/16 → 16/05/20
Project: Research