Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Peter A. Butler*, William M. Waller, Michael J. Uren, Andrew Allerman, Andrew Armstrong, Robert Kaplar, Martin Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

2 Citations (Scopus)
257 Downloads (Pure)

Abstract

We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.

Original languageEnglish
Article number8101503
Pages (from-to)55-58
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Structured keywords

  • CDTR

Keywords

  • AlGaN
  • mobility
  • ohmic contact
  • Schottky

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