Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Peter A. Butler; William M. Waller; Michael J. Uren; Andrew Allerman; Andrew Armstrong; Robert Kaplar; Martin Kuball

doi:10.1109/LED.2017.2771148

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

Peter A. Butler^*, William M. Waller, Michael J. Uren, Andrew Allerman, Andrew Armstrong, Robert Kaplar, Martin Kuball

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al_0.85Ga_0.15N/Al_0.7Ga_0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 10¹⁰ to 10¹³ cm^-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm²/Vs and peak mobility 155 cm²/Vs. Peak mobility decreased with temperature as T^-0.86 suggesting alloy scattering as the dominant scattering mechanism.

Original language	English
Article number	8101503
Pages (from-to)	55-58
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	1
DOIs	https://doi.org/10.1109/LED.2017.2771148
Publication status	Published - 1 Jan 2018

Research Groups and Themes

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Keywords

AlGaN
mobility
ohmic contact
Schottky

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title = "Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices",

abstract = "We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.",

keywords = "AlGaN, mobility, ohmic contact, Schottky",

author = "Butler, {Peter A.} and Waller, {William M.} and Uren, {Michael J.} and Andrew Allerman and Andrew Armstrong and Robert Kaplar and Martin Kuball",

year = "2018",

month = jan,

day = "1",

doi = "10.1109/LED.2017.2771148",

language = "English",

volume = "39",

pages = "55--58",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

AU - Butler, Peter A.

AU - Waller, William M.

AU - Uren, Michael J.

AU - Allerman, Andrew

AU - Armstrong, Andrew

AU - Kaplar, Robert

AU - Kuball, Martin

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.

AB - We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.

KW - AlGaN

KW - mobility

KW - ohmic contact

KW - Schottky

UR - http://www.scopus.com/inward/record.url?scp=85033694484&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2771148

DO - 10.1109/LED.2017.2771148

M3 - Article (Academic Journal)

AN - SCOPUS:85033694484

SN - 0741-3106

VL - 39

SP - 55

EP - 58

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 8101503

ER -

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

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Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

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High Performance Buffers for RF GaN Electronics

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