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We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm-2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T-0.86 suggesting alloy scattering as the dominant scattering mechanism.
- ohmic contact