Abstract
This paper proposes two new slave latches for improving the Single Event Upset (SEU) tolerance of a flipflop in scan delay testing. The two proposed slave latches utilize additional circuitry to increase the critical charge of the flip-flop compared to designs found in the technical literature. The first (second) latch design achieves a 5.6 (2.4) times larger critical charge with 11% (4%) delay and 16 % (9%) power consumption overhead at 32nm feature size as compared to the best design found in the technical literature. Moreover, it is shown that the proposed slave latches have also superior performance in the presence of a single event with a multiple node upset.
Original language | English |
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Title of host publication | Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems |
Pages | 67-72 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 1 Dec 2012 |
Event | 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 - Austin, TX, United Kingdom Duration: 3 Oct 2012 → 5 Oct 2012 |
Conference
Conference | 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 |
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Country/Territory | United Kingdom |
City | Austin, TX |
Period | 3/10/12 → 5/10/12 |
Keywords
- flip-flop
- Radiation hardening
- Single Event Upset
- soft error