On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, M. Kuball, M. J. Uren, G. Meneghesso, E. Zanoni, M. Tack

Research output: Contribution to conferenceConference Paperpeer-review

74 Citations (Scopus)
522 Downloads (Pure)

Abstract

A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is
substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.
Original languageEnglish
Pages37-40
Number of pages4
Publication statusPublished - May 2015

Structured keywords

  • CDTR

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