On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

P. Moens; P. Vanmeerbeek; A. Banerjee; M. Caesar; J. Guo; C. Liu; A. Salih; M. Meneghini; M. Kuball; M. J. Uren; G. Meneghesso; E. Zanoni; M. Tack

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, M. Kuball, M. J. Uren, G. Meneghesso, E. Zanoni, M. Tack

School of Physics

Research output: Contribution to conference › Conference Paper › peer-review

111 Citations (Scopus)

522 Downloads (Pure)

Abstract

A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is
substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.

Original language	English
Pages	37-40
Number of pages	4
Publication status	Published - May 2015

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CDTR

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E2coGaN - Energy Efficient Converters using GaN Power Devices
Kuball, M. H. H. (Principal Investigator)
1/04/13 → 31/12/16
Project: Research
Silicon Compatible GaN Power Electronics
Kuball, M. H. H. (Principal Investigator)
1/03/13 → 31/08/18
Project: Research

Cite this

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title = "On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices",

abstract = "A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage issubstantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.",

author = "P. Moens and P. Vanmeerbeek and A. Banerjee and M. Caesar and J. Guo and C. Liu and A. Salih and M. Meneghini and M. Kuball and Uren, {M. J.} and G. Meneghesso and E. Zanoni and M. Tack",

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language = "English",

pages = "37--40",

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TY - CONF

T1 - On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

AU - Moens, P.

AU - Vanmeerbeek, P.

AU - Banerjee, A.

AU - Caesar, M.

AU - Guo, J.

AU - Liu, C.

AU - Salih, A.

AU - Meneghini, M.

AU - Kuball, M.

AU - Uren, M. J.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Tack, M.

PY - 2015/5

Y1 - 2015/5

N2 - A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage issubstantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.

AB - A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage issubstantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.

M3 - Conference Paper

SP - 37

EP - 40

ER -

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Abstract

Research Groups and Themes

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Projects

E2coGaN - Energy Efficient Converters using GaN Power Devices

Silicon Compatible GaN Power Electronics

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