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On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices
P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, M. Kuball, M. J. Uren, G. Meneghesso, E. Zanoni, M. Tack
Research output: Contribution to conference › Conference Paper › peer-review
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