On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, M. Kuball, M. J. Uren, G. Meneghesso, E. Zanoni, M. Tack

Research output: Contribution to conferenceConference Paperpeer-review

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