On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

P. Moens, P. Vanmeerbeek, A. Banerjee, M. Caesar, J. Guo, C. Liu, A. Salih, M. Meneghini, M. Kuball, M. J. Uren, G. Meneghesso, E. Zanoni, M. Tack

School of Physics

Research output: Contribution to conference › Conference Paper › peer-review

111 Citations (Scopus)

522 Downloads (Pure)

2 results

Finished
E2coGaN - Energy Efficient Converters using GaN Power Devices
Kuball, M. H. H. (Principal Investigator)
1/04/13 → 31/12/16
Project: Research
Silicon Compatible GaN Power Electronics
Kuball, M. H. H. (Principal Investigator)
1/03/13 → 31/08/18
Project: Research