On the Impact of Through-Silicon-Via-Induced Stress on 65-nm CMOS Devices

Roshan Weerasekera, Hong Yu Li, Lim Wei Yi, Hu Sanming, Jinglin Shi, Je Minkyu, Keng Hwa Teo

Research output: Contribution to journal › Article (Academic Journal) › peer-review

23 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	18-20
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2228158
Publication status	Published - 2013

Research Groups and Themes

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title = "On the Impact of Through-Silicon-Via-Induced Stress on 65-nm CMOS Devices",

author = "Roshan Weerasekera and Li, {Hong Yu} and Yi, {Lim Wei} and Hu Sanming and Jinglin Shi and Je Minkyu and Teo, {Keng Hwa}",

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AU - Weerasekera, Roshan

AU - Li, Hong Yu

AU - Yi, Lim Wei

AU - Sanming, Hu

AU - Shi, Jinglin

AU - Minkyu, Je

AU - Teo, Keng Hwa

PY - 2013

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DO - 10.1109/LED.2012.2228158

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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