On the Impact of Through-Silicon-Via-Induced Stress on 65-nm CMOS Devices

Research output: Contribution to journal › Article (Academic Journal) › peer-review

23 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	18-20
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2228158
Publication status	Published - 2013

Research Groups and Themes

@article{088258d045e74965b26469a12589d115,

title = "On the Impact of Through-Silicon-Via-Induced Stress on 65-nm CMOS Devices",

author = "Roshan Weerasekera and Li, \{Hong Yu\} and Yi, \{Lim Wei\} and Hu Sanming and Jinglin Shi and Je Minkyu and Teo, \{Keng Hwa\}",

year = "2013",

doi = "10.1109/LED.2012.2228158",

language = "Undefined/Unknown",

volume = "34",

pages = "18--20",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "1",

}

TY - JOUR

T1 - On the Impact of Through-Silicon-Via-Induced Stress on 65-nm CMOS Devices

AU - Weerasekera, Roshan

AU - Li, Hong Yu

AU - Yi, Lim Wei

AU - Sanming, Hu

AU - Shi, Jinglin

AU - Minkyu, Je

AU - Teo, Keng Hwa

PY - 2013

Y1 - 2013

U2 - 10.1109/LED.2012.2228158

DO - 10.1109/LED.2012.2228158

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 34

SP - 18

EP - 20

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -