Abstract
There are huge differences in dynamic on-resistance Ron, also known as current-collapse, between current GaN power HEMT technologies. Here we illustrate this fact with dynamic Ron measurements on two commercially available devices from 2 different manufacturers, with one showing more than a factor of 2 increase in dynamic Ron after OFF-state drain bias (type 1) and the other one <15% change. HTRB stress for 1000h and 3000h on type 1 and type 2 respectively was found to only make subtle changes to dynamic Ron, with type 1 still showing a much larger dynamic Ron than type 2. A model for dynamic Ron is presented based on a floating, highly resistive, epitaxial buffer whose potential is determined by parasitic leakage paths. The difficulty in controlling local leakage paths can explain the problems that manufacturers are still finding in suppressing dynamic Ron.
Original language | English |
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Pages (from-to) | 306-311 |
Number of pages | 6 |
Journal | Microelectronics Reliability |
Volume | 81 |
Early online date | 18 Oct 2017 |
DOIs | |
Publication status | Published - Feb 2018 |
Research Groups and Themes
- CDTR
Keywords
- Buffer design
- Commercial GaN HEMTs
- Current collapse
- Dynamic R
- HTRB stress
- Leakage path