On the performance of voltage source converters based on silicon carbide technology

Saeed Jahdi, Olayiwola Alatise, Phil Mawby

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

The energy conversion efficiency of voltage source converters based on 1.2 kV silicon carbide MOSFETs and Schottky diodes have been assessed by device measurements and converter simulations. A similar measurement and simulation study has also been performed on a similarly rated 1.2 kV silicon IGBT and PiN diode pair. Transistor to diode current commutation measurements have been performed in a clamped inductive switching test rig for a temperature range between -75°C to 175°C. The measurements have also been performed with different switching rates modulated by a range of gate resistances between 10Ω to 1000Ω. The measurements show that the switching energy of the SiC MOSFETs/SBD pair generally exhibits a negative temperature coefficient whereas that of the silicon IGBT/PiN diode pair exhibits a positive temperature coefficient. Furthermore, the switching energy of the SiC devices are 80% lower than the silicon bipolar technologies. The measurements have been used as inputs into the simulation of a 3 phase, 3-level neutral point clamped voltage source converter. Results from the converter simulations show that the SiC NPC-VSC exhibits 5% higher energy conversion efficiency, 3% less THD and 500% higher maximum switching frequency on average.

Original languageEnglish
Title of host publicationINTELEC 2013 - 35th International Telecommunications Energy Conference, Smart Power and Efficiency
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Volume2013-October
ISBN (Electronic)9783800735006
Publication statusPublished - 1 Jan 2013
Event35th International Telecommunications Energy Conference, Smart Power and Efficiency, INTELEC 2013 - Hamburg, Germany
Duration: 13 Oct 201317 Oct 2013

Conference

Conference35th International Telecommunications Energy Conference, Smart Power and Efficiency, INTELEC 2013
CountryGermany
CityHamburg
Period13/10/1317/10/13

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