On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

Arkadeep Deb; Jose Ortiz Gonzalez; Erfan Bashar; Saeed Jahdi; Mohamed Taha; Philip Mawby; Olayiwola Alatise

doi:10.1109/WiPDAEurope55971.2022.9936437

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

Arkadeep Deb
, Jose Ortiz Gonzalez
, Erfan Bashar
, Saeed Jahdi
, Mohamed Taha
, Philip Mawby
, Olayiwola Alatise

Electrical Energy Management

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

9 Citations (Scopus)

321 Downloads (Pure)

Abstract

This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typically comprising preconditioning, VTH measurement, gate voltage stress and VTH measurement after stress. However, with Wide bandgap (WBG) devices like SiC and GaN transistors, the repeatability of VTH measurement, the impact of VTH measurement duration, delay between successive measurements and the role of preconditioning on the accuracy of VTH are currently under study. With current industrial and academic research interest in bias temperature instability in WBG devices, this paper provides significant insight into how repeatable VTH measurement is in WBG devices since measuring VTH can change it. The impact of repeated measurements on the cumulative VTH shift is investigated in both WBG technologies with different delay times between successive measurements with and without preconditioning. Unipolar and Bipolar preconditioning pulses are compared regarding VTH measurement in SiC MOSFETs.

Original language	English
Title of host publication	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Place of Publication	Coventry, United Kingdom
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	6
ISBN (Electronic)	9781665488143
ISBN (Print)	9781665488150
DOIs	https://doi.org/10.1109/WiPDAEurope55971.2022.9936437
Publication status	Published - 8 Nov 2022
Event	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) - Duration: 18 Sept 2022 → 20 Sept 2022

Conference

Conference	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Period	18/09/22 → 20/09/22

Bibliographical note

Funding Information:
This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through the grant reference EP/R004366/1 and by Innovate UK through the APC-funded @FutureBEV project with reference number 50140. *He is also with Cairo University, Egypt. 978-1-6654-8814-3/22/$31.00 ©2022 IEEE

Publisher Copyright:
© 2022 IEEE.

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10.1109/WiPDAEurope55971.2022.9936437

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Deb, A., Gonzalez, J. O., Bashar, E., Jahdi, S., Taha, M., Mawby, P., & Alatise, O. (2022). On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/WiPDAEurope55971.2022.9936437

Deb, Arkadeep ; Gonzalez, Jose Ortiz ; Bashar, Erfan et al. / On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices. 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom : Institute of Electrical and Electronics Engineers (IEEE), 2022.

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abstract = "This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typically comprising preconditioning, VTH measurement, gate voltage stress and VTH measurement after stress. However, with Wide bandgap (WBG) devices like SiC and GaN transistors, the repeatability of VTH measurement, the impact of VTH measurement duration, delay between successive measurements and the role of preconditioning on the accuracy of VTH are currently under study. With current industrial and academic research interest in bias temperature instability in WBG devices, this paper provides significant insight into how repeatable VTH measurement is in WBG devices since measuring VTH can change it. The impact of repeated measurements on the cumulative VTH shift is investigated in both WBG technologies with different delay times between successive measurements with and without preconditioning. Unipolar and Bipolar preconditioning pulses are compared regarding VTH measurement in SiC MOSFETs.",

author = "Arkadeep Deb and Gonzalez, \{Jose Ortiz\} and Erfan Bashar and Saeed Jahdi and Mohamed Taha and Philip Mawby and Olayiwola Alatise",

note = "Funding Information: This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through the grant reference EP/R004366/1 and by Innovate UK through the APC-funded @FutureBEV project with reference number 50140. *He is also with Cairo University, Egypt. 978-1-6654-8814-3/22/\$31.00 {\textcopyright}2022 IEEE Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe) ; Conference date: 18-09-2022 Through 20-09-2022",

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Deb, A, Gonzalez, JO, Bashar, E, Jahdi, S, Taha, M, Mawby, P & Alatise, O 2022, On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices. in 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Institute of Electrical and Electronics Engineers (IEEE), Coventry, United Kingdom, 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 18/09/22. https://doi.org/10.1109/WiPDAEurope55971.2022.9936437

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices. / Deb, Arkadeep; Gonzalez, Jose Ortiz; Bashar, Erfan et al.
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE), 2022.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

AU - Deb, Arkadeep

AU - Gonzalez, Jose Ortiz

AU - Bashar, Erfan

AU - Jahdi, Saeed

AU - Taha, Mohamed

AU - Mawby, Philip

AU - Alatise, Olayiwola

N1 - Funding Information: This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) through the grant reference EP/R004366/1 and by Innovate UK through the APC-funded @FutureBEV project with reference number 50140. *He is also with Cairo University, Egypt. 978-1-6654-8814-3/22/$31.00 ©2022 IEEE Publisher Copyright: © 2022 IEEE.

PY - 2022/11/8

Y1 - 2022/11/8

N2 - This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typically comprising preconditioning, VTH measurement, gate voltage stress and VTH measurement after stress. However, with Wide bandgap (WBG) devices like SiC and GaN transistors, the repeatability of VTH measurement, the impact of VTH measurement duration, delay between successive measurements and the role of preconditioning on the accuracy of VTH are currently under study. With current industrial and academic research interest in bias temperature instability in WBG devices, this paper provides significant insight into how repeatable VTH measurement is in WBG devices since measuring VTH can change it. The impact of repeated measurements on the cumulative VTH shift is investigated in both WBG technologies with different delay times between successive measurements with and without preconditioning. Unipolar and Bipolar preconditioning pulses are compared regarding VTH measurement in SiC MOSFETs.

AB - This paper investigates the peculiarities and challenges of accurate threshold voltage ( VTH ) measurement after gate bias stress in SiC MOSFETs and GaN e-HEMTs. Traditional techniques historically used in silicon MOSFETs involve test sequences typically comprising preconditioning, VTH measurement, gate voltage stress and VTH measurement after stress. However, with Wide bandgap (WBG) devices like SiC and GaN transistors, the repeatability of VTH measurement, the impact of VTH measurement duration, delay between successive measurements and the role of preconditioning on the accuracy of VTH are currently under study. With current industrial and academic research interest in bias temperature instability in WBG devices, this paper provides significant insight into how repeatable VTH measurement is in WBG devices since measuring VTH can change it. The impact of repeated measurements on the cumulative VTH shift is investigated in both WBG technologies with different delay times between successive measurements with and without preconditioning. Unipolar and Bipolar preconditioning pulses are compared regarding VTH measurement in SiC MOSFETs.

U2 - 10.1109/WiPDAEurope55971.2022.9936437

DO - 10.1109/WiPDAEurope55971.2022.9936437

M3 - Conference Contribution (Conference Proceeding)

SN - 9781665488150

BT - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Coventry, United Kingdom

T2 - 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

Y2 - 18 September 2022 through 20 September 2022

ER -

Deb A, Gonzalez JO, Bashar E, Jahdi S, Taha M, Mawby P et al. On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices. In 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe). Coventry, United Kingdom: Institute of Electrical and Electronics Engineers (IEEE). 2022 doi: 10.1109/WiPDAEurope55971.2022.9936437

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

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