Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

James W Pomeroy*, Michael J Uren, B. Lambert, Martin H H Kuball

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

33 Citations (Scopus)
404 Downloads (Pure)

Abstract

Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that self-heating is similar in RF and DC operations and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC self-heating at same power dissipation. Two cases are examined and the implications for accelerated life testing are discussed: typical (30 V) and high (100 V) drain voltages.

Original languageEnglish
Pages (from-to)2505-2510
Number of pages6
JournalMicroelectronics Reliability
Volume55
Issue number12
Early online date9 Oct 2015
DOIs
Publication statusPublished - 1 Dec 2015

Structured keywords

  • CDTR

Keywords

  • GaN
  • HEMT
  • Reliability
  • RF
  • Simulation
  • Temperature
  • Thermography

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