Operation of metallic base transistors with fullerene emitter

L Rossi, MS Meruvia, IA Hummelgen, W Schwarzacher, AA Pasa

Research output: Contribution to journalArticle (Academic Journal)peer-review

6 Citations (Scopus)

Abstract

Hybrid organic-inorganic metal-base transistors with C-60 fullerene emitter, metallic polymer base layer, and n-Si collector are straightforward to fabricate and show common-base current gains up to 1.0. Ag contacts to the C-60 layer and a reduction in the latter's thickness lead to a significant performance improvement compared to previously reported devices. Two-terminal electrical measurements suggest that the devices function by charge transfer across a rectifying C-60/Si junction formed in naturally occurring holes in the base layer and confirm the presence of barriers at the C-60/metal and metal/Si junctions.
Translated title of the contributionOperation of metallic base transistors with fullerene emitter
Original languageEnglish
Pages (from-to)024504-1 - 024504-3
Number of pages3
JournalJournal of Applied Physics
Volume100(2)
DOIs
Publication statusPublished - Jul 2006

Bibliographical note

Publisher: American Institute of Physics

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