Operation of metallic base transistors with fullerene emitter

Hybrid organic-inorganic metal-base transistors with C-60 fullerene emitter, metallic polymer base layer, and n-Si collector are straightforward to fabricate and show common-base current gains up to 1.0. Ag contacts to the C-60 layer and a reduction in the latter's thickness lead to a significant performance improvement compared to previously reported devices. Two-terminal electrical measurements suggest that the devices function by charge transfer across a rectifying C-60/Si junction formed in naturally occurring holes in the base layer and confirm the presence of barriers at the C-60/metal and metal/Si junctions.