Opportunities, Challenges and Potential Solutions in the Application of Fast-Switching Silicon Carbide (SiC) Power Devices and Converters

Xibo Yuan*, Ian Laird, Sam D Walder

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

11 Downloads (Pure)

Abstract

Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on the academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference for power electronics engineers, to accelerate the adoption and deployment of SiC devices and converters.
Original languageEnglish
Number of pages21
JournalIEEE Transactions on Power Electronics
Early online date18 Sep 2020
DOIs
Publication statusE-pub ahead of print - 18 Sep 2020

Keywords

  • Silicon carbide
  • Schottky diodes
  • Silicon
  • MOSFET
  • Insulated gate bipolar transistors
  • Density measurement
  • Power system measurements

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