Optical characteristics of 1.55 μm GaInNAs multiple quantum wells

HD Sun, AH Clark, HY Liu, M Hokinson, S Calvez, MD Dawson, YN Qiu, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

26 Citations (Scopus)


We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs
Translated title of the contributionOptical characteristics of 1.55 μm GaInNAs multiple quantum wells
Original languageEnglish
Pages (from-to)4013 - 4015
Number of pages3
JournalApplied Physics Letters
Volume85 (18)
Publication statusPublished - 2004

Bibliographical note

Publisher: AIP

Fingerprint Dive into the research topics of 'Optical characteristics of 1.55 μm GaInNAs multiple quantum wells'. Together they form a unique fingerprint.

Cite this