Optical characteristics of 1.55 μm GaInNAs multiple quantum wells

HD Sun; AH Clark; HY Liu; M Hokinson; S Calvez; MD Dawson; YN Qiu; JM Rorison

doi:10.1063/1.1812371

Optical characteristics of 1.55 μm GaInNAs multiple quantum wells

HD Sun
, AH Clark
, HY Liu
, M Hokinson
, S Calvez
, MD Dawson
, YN Qiu
, JM Rorison

Research output: Contribution to journal › Article (Academic Journal) › peer-review

27 Citations (Scopus)

Abstract

We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs

Translated title of the contribution	Optical characteristics of 1.55 μm GaInNAs multiple quantum wells
Original language	English
Pages (from-to)	4013 - 4015
Number of pages	3
Journal	Applied Physics Letters
Volume	85 (18)
DOIs	https://doi.org/10.1063/1.1812371
Publication status	Published - 2004

Bibliographical note

Publisher: AIP

Research Groups and Themes

Photonics and Quantum

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@article{a4151263f0954ec1862093219599d177,

title = "Optical characteristics of 1.55 μm GaInNAs multiple quantum wells",

abstract = "We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs",

author = "HD Sun and AH Clark and HY Liu and M Hokinson and S Calvez and MD Dawson and YN Qiu and JM Rorison",

note = "Publisher: AIP",

year = "2004",

doi = "10.1063/1.1812371",

language = "English",

volume = "85 (18)",

pages = "4013 -- 4015",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Optical characteristics of 1.55 μm GaInNAs multiple quantum wells

AU - Sun, HD

AU - Clark, AH

AU - Liu, HY

AU - Hokinson, M

AU - Calvez, S

AU - Dawson, MD

AU - Qiu, YN

AU - Rorison, JM

N1 - Publisher: AIP

PY - 2004

Y1 - 2004

N2 - We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs

AB - We report the optical characterization of high-quality 1.55 μm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 μm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs

U2 - 10.1063/1.1812371

DO - 10.1063/1.1812371

M3 - Article (Academic Journal)

SN - 1077-3118

VL - 85 (18)

SP - 4013

EP - 4015

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Optical characteristics of 1.55 μm GaInNAs multiple quantum wells

Abstract

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